JPH0338741B2 - - Google Patents

Info

Publication number
JPH0338741B2
JPH0338741B2 JP58182006A JP18200683A JPH0338741B2 JP H0338741 B2 JPH0338741 B2 JP H0338741B2 JP 58182006 A JP58182006 A JP 58182006A JP 18200683 A JP18200683 A JP 18200683A JP H0338741 B2 JPH0338741 B2 JP H0338741B2
Authority
JP
Japan
Prior art keywords
film
semiconductor layer
single crystal
island region
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58182006A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074635A (ja
Inventor
Akira Tabata
Motomori Myajima
Yoshibumi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58182006A priority Critical patent/JPS6074635A/ja
Priority to KR1019840005729A priority patent/KR890003146B1/ko
Priority to US06/652,075 priority patent/US4579625A/en
Priority to EP84401871A priority patent/EP0140749B1/en
Priority to DE8484401871T priority patent/DE3473690D1/de
Publication of JPS6074635A publication Critical patent/JPS6074635A/ja
Publication of JPH0338741B2 publication Critical patent/JPH0338741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58182006A 1983-09-30 1983-09-30 半導体装置の製造方法 Granted JPS6074635A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58182006A JPS6074635A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法
KR1019840005729A KR890003146B1 (ko) 1983-09-30 1984-09-19 유전체 격리구조를 가진 보상 반도체장치를 제조하는 방법
US06/652,075 US4579625A (en) 1983-09-30 1984-09-19 Method of producing a complementary semiconductor device with a dielectric isolation structure
EP84401871A EP0140749B1 (en) 1983-09-30 1984-09-21 Method for producing a complementary semiconductor device with a dielectric isolation structure
DE8484401871T DE3473690D1 (en) 1983-09-30 1984-09-21 Method for producing a complementary semiconductor device with a dielectric isolation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182006A JPS6074635A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6074635A JPS6074635A (ja) 1985-04-26
JPH0338741B2 true JPH0338741B2 (en]) 1991-06-11

Family

ID=16110672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182006A Granted JPS6074635A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US4579625A (en])
EP (1) EP0140749B1 (en])
JP (1) JPS6074635A (en])
KR (1) KR890003146B1 (en])
DE (1) DE3473690D1 (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081839A (ja) * 1983-10-12 1985-05-09 Fujitsu Ltd 半導体装置の製造方法
US4961097A (en) * 1985-03-11 1990-10-02 Motorola Inc. High frequency photo detector and method for the manufacture thereof
US4839711A (en) * 1986-10-16 1989-06-13 Harris Corporation Dielectric for laser trimming
US4870029A (en) * 1987-10-09 1989-09-26 American Telephone And Telegraph Company, At&T-Technologies, Inc. Method of forming complementary device structures in partially processed dielectrically isolated wafers
US4820653A (en) * 1988-02-12 1989-04-11 American Telephone And Telegraph Company Technique for fabricating complementary dielectrically isolated wafer
US6228750B1 (en) 1994-12-30 2001-05-08 Lucent Technologies Method of doping a semiconductor surface
KR20100013649A (ko) * 2008-07-31 2010-02-10 삼성전자주식회사 광전소자 및 이의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642352A (en) * 1979-09-17 1981-04-20 Nippon Telegr & Teleph Corp <Ntt> Manufacture of composite semiconductor device
US4408386A (en) * 1980-12-12 1983-10-11 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor integrated circuit devices
JPS57204133A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Manufacture of semiconductor integrated circuit
JPS59202647A (ja) * 1983-05-02 1984-11-16 Oki Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR850002696A (ko) 1985-05-15
DE3473690D1 (en) 1988-09-29
US4579625A (en) 1986-04-01
EP0140749B1 (en) 1988-08-24
KR890003146B1 (ko) 1989-08-23
JPS6074635A (ja) 1985-04-26
EP0140749A1 (en) 1985-05-08

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